GB25XF120K Datasheet, PDF (2/11 Pages) International Rectifier – IGBT 6PACK MODULE

GB25XF120K
Electrical Characteristics @ T_J = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units Conditions
BV_CES
Collector-to-Emitter Breakdown Voltage 1200 —
—
V VGE = 0V, IC = 500µA
∆V_(BR)CES/∆T_JTemperature Coeff. of Breakdown Voltage — 0.84 — V/°C V_GE = 0V, I_C = 1mA (25°C-125°C)
V_CE(on)
Collector-to-Emitter Voltage
— 2.35 2.50 V IC = 25A, VGE = 15V
— 2.80 3.00
I_C = 40A, V_GE = 15V
— 2.75 —
I_C = 25A, V_GE = 15V, T_J = 125°C
— 3.40 —
I_C = 40A, V_GE = 15V, T_J = 125°C
V_GE(th)
∆V_GE(th)
Gate Threshold Voltage
Threshold Voltage temp. coefficient
4.0 5.0 6.0
V_CE = V_GE, I_C = 250µA
— -12 — mV/°C VCE = VGE, IC = 1mA (25°C-125°C)
I_CES
Zero Gate Voltage Collector Current
—
5
40 µA VGE = 0V, VCE = 1200V
— 500 —
V_GE = 0V, V_CE = 1200V, T_J = 125°C
— 1.90 2.40 V IF = 25A
V_FM
Diode Forward Voltage Drop
— 2.15 2.75
I_F = 40A
— 2.00 —
I_F = 25A, T_J = 125°C
— 2.35 —
I_F = 40A, T_J = 125°C
I_GES
Gate-to-Emitter Leakage Current
—
— ±200 nA VGE = ±20V
Ref.Fig
1,2
3,4
3,4
16
Switching Characteristics @ T_J = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Q_g
Total Gate Charge (turn-on)
— 180 272
I_C = 25A
Q_ge
Gate-to-Emitter Charge (turn-on)
—
20
33 nC VCC = 600V
Q_gc
Gate-to-Collector Charge (turn-on)
— 90 137
V_GE = 15V
E_on
Turn-On Switching Loss
— 2220 4260
I_C = 25A, V_CC = 600V
E_off
Turn-Off Switching Loss
E_tot
Total Switching Loss
— 1850 3100 µJ VGE = 15V, RG = 10Ω, L = 400µH
— 4070 7360
d T_J = 25°C
E_on
Turn-On Switching Loss
— 3150 5120
I_C = 25A, V_CC = 600V
E_off
Turn-Off Switching Loss
E_tot
Total Switching Loss
— 2720 4260 µJ VGE = 15V, RG = 10Ω, L = 400µH
— 5870 9380
d T_J = 125°C
t_d(on)
Turn-On delay time
— 60 80
I_C = 25A, V_CC = 600V
t_r
Rise time
—
30
45 ns VGE = 15V, RG = 10Ω, L = 400µH
t_d(off)
Turn-Off delay time
— 450 850
T_J = 125°C
t_f
Fall time
— 200 320
C_ies
Input Capacitance
— 2370 —
V_GE = 0V
C_oes
Output Capacitance
— 455 — pF VCC = 30V
C_res
Reverse Transfer Capacitance
— 60 —
f = 1Mhz
RBSOA Reverse Bias Safe Operating Area
FULL SQUARE
T_J = 150°C, I_C = 80A
R_G = 10Ω, V_GE = +15V to 0V
T_J = 150°C
SCSOA Short Circuit Safe Operating Area
10
—
— µs VCC = 900V, VP = 1200V
R_G = 10Ω, V_GE = +15V to 0V
I_rr
Peak Reverse Recovery Current
—
55
—
A TJ = 125°C
V_CC = 600V, I_F = 25A, L = 400µH
V_GE = 15V, R_G = 10Ω
 For UL Applications, T_J is limited to +125°C (See File E78996).
‚ Energy losses include "tail" and diode reverse recovery.
2
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Ref.Fig
10
CT1
CT4
5,7
CT4
WF1,2
6,8
CT4
WF1
WF2
9
CT2
14
CT3
17,18,19
CT4