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AUIRLL014N Datasheet, PDF (6/12 Pages) International Rectifier – HEXFET® Power MOSFET
AUIRLL014N
10V
QGS
VG
QG
QGD
Charge
Fig 9a. Basic Gate Charge Waveform
Current Regulator
Same Type as D.U.T.
50K
12V
.2F
.3F
D.U.T.
+
-VDS
VGS
3mA
IG
ID
Current Sampling Resistors
Fig 9b. Gate Charge Test Circuit
1000
VDS
VGS
RG
RD
D.U.T.
10V
Pulse Width µs
Duty Factor 
+
-
VDD
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 10b. Switching Time Waveforms
100
D = 0.50
0.20
0.10
10
0.05
0.02
0.01
1
0.1
0.00001
SINGLE PULSE
(THERMAL RESPONSE)
0.0001
0.001
PDM
Notes:
1. Duty factor D = t1 / t 2
t1
t2
2. Peak TJ = PDM x Z thJA + TA
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
A
1000
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
6
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