AUIRLL014N Datasheet, PDF (2/12 Pages) International Rectifier – HEXFET® Power MOSFET

AUIRLL014N
Static Electrical Characteristics @ T_J = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V_(BR)DSS
Drain-to-Source Breakdown Voltage
V_(BR)DSS/T_{J Breakdown Voltage Temp. Coefficient}
R_DS(on)
Static Drain-to-Source On-Resistance
V_GS(th)
gfs
I_DSS
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
I_GSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
55 ––– –––
––– 0.015 –––
––– ––– 0.14
––– ––– 0.20
––– ––– 0.28
1.0 ––– 2.0
2.3 ––– –––
––– ––– 25
––– ––– 250
––– ––– 100
––– ––– -100
V
V/°C

V
S
μA
nA
V_GS = 0V, I_D = 250μA
Reference to 25°C, I_D = 1mA
f V_GS = 10V, I_D = 2.0A
f V_GS = 5.0V, I_D = 1.2A
f V_GS = 4.0V, I_D = 1.0A
V_DS = V_GS, I_D = 250μA
V_DS = 25V, I_D = 1.0A
V_DS = 55V, V_GS = 0V
V_DS = 44V, V_GS = 0V, T_J = 150°C
V_GS = 16V
V_GS = -16V
Dynamic Electrical Characteristics @ T_J = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Q_g
Total Gate Charge
––– 9.5 14
I_D = 2.0A
Q_gs
Q_gd
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
––– 1.1 1.7
––– 3.0 4.4
f nC VDS = 44V
V_GS = 10V, See Fig. 6 and 9
t_d(on)
Turn-On Delay Time
––– 5.1 –––
V_DD = 28V
t_r
Rise Time
––– 4.9 ––– ns I_D = 2.0A
t_d(off)
Turn-Off Delay Time
t_f
Fall Time
––– 14 –––
––– 2.9 –––
f ^{RG = 6.0 }
R_D = 14See Fig. 10
C_iss
Input Capacitance
––– 230 –––
V_GS = 0V
C_oss
Output Capacitance
––– 66 ––– pF V_DS = 25V
C_rss
Reverse Transfer Capacitance
––– 30 –––
ƒ = 1.0MHz, See Fig. 5
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
I_S
Continuous Source Current
––– ––– 1.3
MOSFET symbol
(Body Diode)
I_SM
Pulsed Source Current
Ù (Body Diode)
V_SD
Diode Forward Voltage
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
t_on
Forward Turn-On Time
––– ––– 16
A showing the
integral reverse
––– ––– 1.0
––– 41 61
––– 73 110
f ^{p-n junction diode.}
V T_J = 25°C, I_S = 2.0A, V_GS = 0V
f ^{ns TJ = 25°C, IF = 2.0A}
nC di/dt = 100A/μs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11)
‚ V_DD = 25V, starting T_J = 25°C, L = 4.0mH
R_G = 25, I_AS = 4.0A. (See Figure 12)
ƒ I_SD  2.0A, di/dt  170A/µs, V_DD  V_(BR)DSS,
T_J  150°C .
„ Pulse width 300µs; duty cycle 2%.
… When mounted on FR-4 board using minimum recommended
footprint.
† When mounted on 1 inch square copper board, for comparison
with other SMD devices.
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