AUIRLL014N Datasheet, PDF (4/12 Pages) International Rectifier – HEXFET® Power MOSFET

AUIRLL014N
100
VGS
TOP
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
10
100
VGS
TOP
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
10
20μs PULSE WIDTH
1
3.0V _{TJ = 25°C}
A
0.1
1
10
100
VDS , Drain-to-Source Voltage (V)
3.0V
20μs PULSE WIDTH
1
T_J = 150°C
A
0.1
1
10
100
V _DS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics,
Fig 2. Typical Output Characteristics,
100
2.0
ID = 2.0A
1.5
10
T_J = 25°C
T_J = 150°C
V_DS = 25V
20μs PULSE WIDTH
1
A
3.0
4.0
5.0
6.0
7.0
V_GS , Gate-to-Source Voltage (V)
1.0
0.5
0.0
-60
V_GS = 10V
A
-40 -20 0 20 40 60 80 100 120 140 160
T_J , Junction Temperature (°C)
Fig 3. Typical Transfer Characteristics
4
Fig 4. Normalized On-Resistance
Vs. Temperature
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