SI4420DY Datasheet, PDF (5/8 Pages) NXP Semiconductors – N-channel enhancement mode field-effect transistor

14
12
10
8
6
4
2
0
25
50
75
100
125
150
T_C , Case Temperature ( ^°C)
Fig 9. Maximum Drain Current Vs.
Case Temperature
Si4420DY
100
80
60
40
20
0
0.01
0.1
1
A
10
100
Tim e (sec)
Fig 10. Typical Power Vs. Time
100
D = 0.50
10
0.20
0.10
0.05
0.02
1
0.01
0.1
SINGLE PULSE
(THERMAL RESPONSE)
P_DM
t₁
t₂
0.01
0.0001
0.001
Notes:
1. Duty factor D = t₁ / t ₂
2. Peak T _J = P _DM x Z _thJA + T_A
0.01
0.1
1
10
100
t₁ , Rectangular Pulse Duration (sec)
Fig 11. Typical Effective Transient Thermal Impedance, Junction-to-Ambient
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