SI4420DY Datasheet, PDF (3/8 Pages) NXP Semiconductors – N-channel enhancement mode field-effect transistor

1000
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
100
4.5V
1000
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
100
Si4420DY
4.5V
10
0.1
20µs PULSE WIDTH
TJ = 25 ^°C
1
10
100
V_DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
10
0.1
20µs PULSE WIDTH
TJ = 150 ^°C
1
10
100
V_DS, Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1000
TJ = -55°C
100
TJ = 25°C
TJ = 150°C
10
4.0
VDS = 25V
20µs PULSE WIDTH
5.0
6.0
7.0
8.0
9.0
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
www.irf.com
2.0
I_D = 12.5A
1.5
1.0
0.5
V_GS = 10V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T_J, Junction Temperature ( ^°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3