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| SI4420DY Datasheet, PDF (2/8 Pages) NXP Semiconductors – N-channel enhancement mode field-effect transistor | |||
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Si4420DY
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage
30 âââ âââ V VGS = 0V, ID = 250µA
âV(BR)DSS/âTJ Breakdown Voltage Temp. Coefficient âââ 0.028 âââ V/°C Reference to 25°C, ID = 1mA
RDS(on)
Static Drain-to-Source On-Resistance
âââ âââ 0.009
âââ âââ 0.013
â¦
VGS = 10V, ID = 12.5A Â
VGS = 4.5V, ID = 10.5A Â
VGS(th)
Gate Threshold Voltage
1.0 âââ âââ V VDS = VGS, ID = 250µA
gfs
Forward Transconductance
âââ 29 âââ S VDS = 15V, ID = 12.5A
IDSS
Drain-to-Source Leakage Current
âââ âââ 1.0
âââ âââ 5.0
µA
VDS = 30V, VGS = 0V
VDS = 30V, VGS = 0V, TJ = 55°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
âââ âââ -100 nA VGS = -20V
âââ âââ 100
VGS = 20V
Qg
Total Gate Charge
âââ 52 78
ID = 12.5A
Qgs
Gate-to-Source Charge
âââ 8.7 âââ nC VDS = 15V
Qgd
Gate-to-Drain ("Miller") Charge
âââ 12 âââ
VGS = 10V, See Fig. 6 Â
td(on)
Turn-On Delay Time
âââ 15 âââ
VDD = 15V
tr
td(off)
Rise Time
Turn-Off Delay Time
âââ 10 âââ ns ID = 1.0A
âââ 55 âââ
RG = 6.0â¦
tf
Fall Time
âââ 47 âââ
RD = 15â¦, Â
Ciss
Input Capacitance
âââ 2240 âââ
VGS = 0V
Coss
Output Capacitance
âââ 1100 âââ pF VDS = 15V
Crss
Reverse Transfer Capacitance
âââ 150 âââ
Æ = 1.0MHz, See Fig. 5Â
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current
(Diode Conduction)
ISM
Pulsed Source Current
(Body Diode) Â
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Min. Typ. Max. Units
Conditions
âââ âââ 2.3
âââ âââ 50
MOSFET symbol
showing the
A integral reverse
p-n junction diode.
D
G
S
âââ âââ 1.1 V TJ = 25°C, IS = 2.3A, VGS = 0V Â
âââ 52 78 ns TJ = 25°C, IF = 2.3A
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature.
 Pulse width ⤠300µs; duty cycle ⤠2%.
 When mounted on FR4 Board, t â¤10 sec
 Starting TJ = 25°C, L = 13mH
RG = 25â¦, IAS = 8.9A. (See Figure 15)
2
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