SI4410DYTRPBF Datasheet, PDF (5/8 Pages) International Rectifier – N-Channel MOSFET

10.0
8.0
6.0
4.0
2.0
0.0
25
50
75
100
125
150
T_C , Case Temperature ( ^°C)
Fig 9. Maximum Drain Current Vs.
Case Temperature
Si4410DYPbF
100
80
60
40
20
0
0.01
0.1
1
10
Time (sec)
A
100
Fig 10. Typical Power Vs. Time
100
D = 0.50
10
0.20
0.10
0.05
1
0.02
0.01
PDM
0.1
0.01
0.00001
t₁
SINGLE PULSE
(THERMAL RESPONSE)
t2
Notes:
1. Duty factor D = t₁ / t ₂
2. Peak T _J = P _DM x Z _thJA + T_A
0.0001
0.001
0.01
0.1
1
t₁ , Rectangular Pulse Duration (sec)
10
100
Fig 11. Typical Effective Transient Thermal Impedance, Junction-to-Ambient
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