SI4410DYTRPBF Datasheet, PDF (1/8 Pages) International Rectifier – N-Channel MOSFET

l N-Channel MOSFET
l Low On-Resistance
l Low Gate Charge
l Surface Mount
l Logic Level Drive
l Lead-Free
Description
This N-channel HEXFET^® Power MOSFET is
produced using International Rectifier's advanced
HEXFET power MOSFET technology. The low on-
resistance and low gate charge inherent to this
technology make this device ideal for low voltage or
battery driven power conversion applications
The SO-8 package with copper leadframe offers
enhanced thermal characteristics that allow power
dissipation of greater that 800mW in typical board
mount applications.
PD - 95168
Si4410DYPbF
HEXFET^® Power MOSFET
S
1
S
2
S
3
G
4
AA
8
D
7
D
V_DSS = 30V
6
D
5 _{D RDS(on) = 0.0135Ω}
Top View
SO-8
Absolute Maximum Ratings
V_DS
I_D @ T_A = 25°C
I_D @ T_A = 70°C
I_DM
P_D @T_A = 25°C
P_D @T_A = 70°C
dv/dt
E_AS
V_GS
T_J, T_STG
Parameter
Drain- Source Voltage
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Pulsed Drain Current 
Power Dissipation ƒ
Power Dissipation ƒ
Linear Derating Factor
Peak Diode Recovery dv/dt …
Single Pulse Avalanche Energy„
Gate-to-Source Voltage
Junction and Storage Temperature Range
Thermal Resistance
R_θJA
www.irf.com
Parameter
Maximum Junction-to-Ambientƒ
Max.
30
±10
±8.0
±50
2.5
1.6
0.02
5.0
400
± 20
-55 to + 150
Max.
50
Units
V
A
W
W/°C
V/ns
mJ
V
°C
Units
°C/W
1
09/22/04