SI4410DYTRPBF Datasheet, PDF (4/8 Pages) International Rectifier – N-Channel MOSFET

Si4410DYPbF
2400
2000
1600
V_GS = 0V, f = 1MHz
C_iss = C_gs + C_{gd ,} C_ds SHORTED
C_rss = C_gd
C_oss = C_ds + C_gd
C_iss
1200
800
C_oss
400
0
1
C_rss
10
100
V_DS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20 _{ID = 10A}
16
V_DS = 24V
V_DS = 15V
12
8
4
0
0
10
20
30
40
50
Q_G , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
10
T_J = 150° C
1
T_J = 25° C
0.1
0.4
V_GS = 0 V
0.5 0.6 0.7 0.8 0.9 1.0
V_SD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
1000
OPERATION IN THIS AREA LIMITED
BY R_DS(on)
100
10us
100us
10
1ms
T_C = 25°C
T_J = 150° C
Single Pulse
1
0.1
1
10ms
10
100
1000
V_DS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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