JANSR2N7392 Datasheet, PDF (5/8 Pages) International Rectifier – RADIATION HARDENED POWER MOSFET THRU - HOLE ( TO - 254AA )

Pre-Irradiation
IRHM7460SE
8000
6000
4000
2000
V_GS = 0V, f = 1MHz
C_iss = C_gs + C_{gd ,} C_ds SHORTED
C_rss = C_gd
C_oss = C_ds + C_gd
C_iss
C_oss
C_rss
0
1
10
100
V_DS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20 _{ID = 18A}
16
12
V_DS = 400V
V_DS = 250V
V_DS = 100V
8
4
FOR TEST CIRCUIT
0
SEE FIGURE 13
0
40
80
120
160
200
Q_G , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
T_J = 150^° C
10
T_J = 25^° C
1
0.1
0.2
V_GS = 0 V
0.6
1.0
1.4
1.8
2.2
V_SD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
www.irf.com
1000
OPERATION IN THIS AREA LIMITED
BY R_DS(on)
100
10us
100us
10
1ms
T_C
T_J
=
=
25 ° C
150° C
Single Pulse
1
10
100
10ms
1000
V_DS , Drain-to-Source Voltage (V)
10000
Fig 8. Maximum Safe Operating Area
5