JANSR2N7392 Datasheet, PDF (1/8 Pages) International Rectifier – RADIATION HARDENED POWER MOSFET THRU - HOLE ( TO - 254AA )

RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-254AA)
PD - 91394E
IRHM7460SE
JANSR2N7392 500V
N-CHANNEL
REF: MIL-PRF-19500/661
RAD Hard^™ HEXFET^® TECHNOLOGY
Product Summary
Part Number Radiation Level RDS(on)
IRHM7460SE 100K Rads (Si) 0.32Ω
I D QPL Part Number
18A JANSR2N7392
International Rectifier’s RADHard^TM HEXFET^® MOSFET
technology provides high performance power MOSFETs
for space applications. This technology has over a de-
cade of proven performance and reliability in satellite
applications. These devices have been characterized
for both Total Dose and Single Event Effects (SEE). The
combination of low RDS(on) and low gate charge reduces
the power losses in switching applications such as DC to
DC converters and motor control. These devices retain
all of the well established advantages of MOSFETs such
as voltage control, fast switching, ease of paralleling and
temperature stability of electrical parameters.
TO-254AA
Features:
! Single Event Effect (SEE) Hardened
! Ultra Low RDS(on)
! Low Total Gate Charge
! Proton Tolerant
! Simple Drive Requirements
! Ease of Paralleling
! Hermetically Sealed
! Light Weight
Absolute Maximum Ratings
Pre-Irradiation
Parameter
ID @ VGS = 12V, TC = 25°C Continuous Drain Current
ID @ VGS = 12V, TC = 100°C Continuous Drain Current
IDM
Pulsed Drain Current ➀
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
Units
18
11.7
A
72
250
W
2.0
W/°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Gate-to-Source Voltage
±20
Single Pulse Avalanche Energy ➁
500
Avalanche Current ➀
18
Repetitive Avalanche Energy ➀
25
Peak Diode Recovery dv/dt ➂
3.8
Operating Junction
-55 to 150
Storage Temperature Range
Lead Temperature
300 (0.063 in. (1.6mm) from case for 10 sec.)
Weight
9.3 (Typical)
V
mJ
A
mJ
V/ns
o_C
g
For footnotes refer to the last page
www.irf.com
1
5/17/01