JANSR2N7381 Datasheet, PDF (5/8 Pages) International Rectifier – RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA)

Pre-Irradiation
IRHY7230CM, JANSR2N7381
2000
1500
V_GS = 0V, f = 1MHz
C_iss = C_gs + C_{gd ,} C_ds SHORTED
C_rss = C_gd
C_oss = C_ds + C_gd
C_iss
1000
500
0
1
C_oss
C_rss
10
100
V_DS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20
ID = 9.4A
16
12
V_DS = 160V
V_DS = 100V
V_DS = 40V
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0
10
20
30
40
50
Q_G , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
10
T_J = 150°C
T_J = 25 °C
1
0.1
0.2
V_GS = 0 V
0.6
1.0
1.4
1.8
2.2
-V_SD ,Source-to-Drain Voltage (V)
1000
OPERATION IN THIS AREA LIMITED
BY R_DS(on)
100
10us
10
100us
1ms
1
10ms
T_C = 25°C
T_J = 150°C
Single Pulse
0.1
1
10
100
1000
V_DS , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
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Fig 8. Maximum Safe Operating Area
5