JANSR2N7381 Datasheet, PDF (3/8 Pages) International Rectifier – RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA)

PRraed-iIarrtaiodniaCtihoanracteristics
IRHY7230CM, JANSR2N7381
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ
Parameter
100 K Rads(Si)¹
300K - 1000K Rads (Si)² Units
Min Max Min Max
Test Conditions
BV_DSS
VGS(th)
Drain-to-Source Breakdown Voltage 200
Gate Threshold Voltage
2.0
I_GSS
Gate-to-Source Leakage Forward —
I_GSS
Gate-to-Source Leakage Reverse —
I_DSS
Zero Gate Voltage Drain Current
—
R_DS(on) Static Drain-to-Source Ã
—
On-State Resistance (TO-3)
R_DS(on) Static Drain-to-Source Ã
—
On-State Resistance (TO-257AA)
V_SD
Diode Forward Voltage Ã
—
—
4.0
100
-100
25
0.40
0.40
1.4
200 — _V
1.25 4.5
— 100 _nA
— -100
—
25 µA
— 0.53 Ω
— 0.53 Ω
—
1.4 V
V_GS = 0V, I_D = 1.0mA
VGS = V_DS, I_D = 1.0mA
V_GS = 20V
V_GS = -20 V
V_DS=160V, V_GS =0V
VGS = 12V, I_D = 6.0A
VGS = 12V, I_D = 6.0A
V_GS = 0V, IS = 9.4A
1. Part number IRHY7230CM (JANSR2N7381)
2. Part numbers IRHY3230CM (JANSF2N7381), IRHY4230CM (JANSG2N7381), and IRHY8230CM (JANSH2N7381)
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion
LET
Energy
(MeV/(mg/cm²)) (MeV)
Cu
28
285
Br
36.8
305
Range
(µm)
43
39
VDS(V)
@VGS=0V @VGS=-5V @VGS=-10V @VGS=-15V @VGS=-20V
190
180
170
125
—
100
100
100
50
—
200
150
Cu
100
Br
50
0
0
-5
-10
-15
-20
VGS
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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