IRFR2905ZPBF Datasheet, PDF (5/12 Pages) International Rectifier – HEXFET® Power MOSFET ( VDSS = 55V , RDS(on) = 14.5mΩ , ID = 42A )

IRFR/U2905ZPbF
70
60
50
40
30
20
10
0
25
LIMITED BY PACKAGE
50 75 100 125 150 175
TC , Case Temperature (°C)
Fig 9. Maximum Drain Current Vs.
Case Temperature
2.0
ID = 36A
VGS = 10V
1.5
1.0
0.5
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
Fig 10. Normalized On-Resistance
Vs. Temperature
10
1
D = 0.50
0.1
0.01
0.001
1E-006
0.20
0.10
0.05
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
τ_{J τJ}
τ_{1 τ1}
R_1R1
Ci= τi/Ri
Ci= i/Ri
R_2R2
τ_{2 τ2}
1E-005
0.0001
0.001
t1 , Rectangular Pulse Duration (sec)
R_{3R3 Ri (°C/W) τi (sec)}
τ_{Cτ 0.3962 0.00012}
τ_{3 τ3}
0.5693 0.00045
0.4129 0.0015
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.01
0.1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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