IRFR2905ZPBF Datasheet, PDF (4/12 Pages) International Rectifier – HEXFET® Power MOSFET ( VDSS = 55V , RDS(on) = 14.5mΩ , ID = 42A )

IRFR/U2905ZPbF
2400
2000
1600
1200
VGS = 0V, f = 1 MHZ
Ciss = C _gs + Cgd, C _ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
800
400
0
1
Coss
Crss
10
100
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20
ID= 36A
16
12
VDS= 44V
VDS= 28V
VDS= 11V
8
4
0
0
FOR TEST CIRCUIT
SEE FIGURE 13
10
20
30
40
50
QG Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000.0
100.0
TJ = 175°C
10.0
TJ = 25°C
1.0
0.1
0.2
VGS = 0V
0.6
1.0
1.4
1.8
2.2
VSD, Source-toDrain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
1000
100
OPERATION IN THIS AREA
LIMITED BY R _DS(on)
10
100µsec
1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1
10
1msec
10msec
100
VDS , Drain-toSource Voltage (V)
1000
Fig 8. Maximum Safe Operating Area
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