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| IRFR2905ZPBF Datasheet, PDF (2/12 Pages) International Rectifier – HEXFET® Power MOSFET ( VDSS = 55V , RDS(on) = 14.5mΩ , ID = 42A ) | |||
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IRFR/U2905ZPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
âV(BR)DSS/âTJ
RDS(on)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
55 âââ âââ
âââ 0.053 âââ
âââ 11.1 14.5
V VGS = 0V, ID = 250µA
e V/°C Reference to 25°C, ID = 1mA
m⦠VGS = 10V, ID = 36A
VGS(th)
Gate Threshold Voltage
2.0 âââ 4.0 V VDS = VGS, ID = 250µA
gfs
Forward Transconductance
20 âââ âââ S VDS = 25V, ID = 36A
IDSS
Drain-to-Source Leakage Current
âââ âââ 20 µA VDS = 55V, VGS = 0V
âââ âââ 250
VDS = 55V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
âââ âââ 200 nA VGS = 20V
Gate-to-Source Reverse Leakage
âââ âââ -200
VGS = -20V
Qg
Total Gate Charge
âââ 29 44
ID = 36A
Qgs
Qgd
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
âââ
âââ
7.7
12
âââ
âââ
e nC VDS = 44V
VGS = 10V
RG
Gate Input Resistance
âââ 1.3 âââ ⦠f = 1MHz, open drain
td(on)
Turn-On Delay Time
âââ 14 âââ
VDD = 28V
tr
Rise Time
âââ 66 âââ
ID = 36A
td(off)
tf
Turn-Off Delay Time
Fall Time
âââ
âââ
31
35
âââ
âââ
e ns RG = 15 â¦
VGS = 10V
LD
Internal Drain Inductance
âââ 4.5 âââ
Between lead,
D
LS
Internal Source Inductance
nH 6mm (0.25in.)
âââ 7.5 âââ
from package
G
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
âââ 1380 âââ
âââ 240 âââ
âââ 120 âââ
âââ 820 âââ
âââ 190 âââ
âââ 300 âââ
and center of die contact
S
VGS = 0V
VDS = 25V
pF Æ = 1.0MHz
VGS = 0V, VDS = 1.0V, Æ = 1.0MHz
f VGS = 0V, VDS = 44V, Æ = 1.0MHz
VGS = 0V, VDS = 0V to 44V
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
âââ âââ 36
MOSFET symbol
(Body Diode)
ISM
Pulsed Source Current
ÃÂ (Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ton
Forward Turn-On Time
âââ âââ 240
A showing the
integral reverse
âââ âââ 1.3
e p-n junction diode.
V TJ = 25°C, IS = 36A, VGS = 0V
âââ 23
âââ 16
35
24
e ns TJ = 25°C, IF = 36A, VDD = 28V
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
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