IRFPC50LC Datasheet, PDF (5/8 Pages) International Rectifier – Power MOSFET(Vdss=600V, Rds(on)=0.60ohm, Id=11A)

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12
10
8
6
4
2
0
A
25
50
75
100
125
150
T_C, Case Temperature (°C)
Fig 9. Maximum Drain Current Vs.
Case Temperature
IRFPC50LC
V_DS
V_GS
R_G
R_D
D.U.T.
10 V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
V_DD
Fig 10a. Switching Time Test Circuit
Fig 10b. Switching Time Waveforms
1
D = 0.50
0.1
0.01
0.20
0.10
0.05
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
0.001
0.00001
0.0001
P_{D M}
t₁
t2
N o tes:
1. Duty factor D = t1 / t ₂
2 . P e a k T_J = P_{D M} x Z _{th J C} + T _C
0.001
0.01
0.1
1
t₁ , Rectangular Pulse Duration (sec)
A
10
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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