IRFPC50LC Datasheet, PDF (4/8 Pages) International Rectifier – Power MOSFET(Vdss=600V, Rds(on)=0.60ohm, Id=11A)

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IRFPC50LC
4000
3000
2000
V _GS = 0V,
f = 1MHz
C_iss = C_gs + C_gd , C_ds SHORTED
C_rss = C_gd
C_oss = C_ds + C _gd
C iss
1000
0
1
C oss
Crss
10
V_DS , Drain-to-Source Voltage (V)
A
100
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20
I_D = 11A
16
12
V_DS = 360V
V_DS = 240V
V_DS = 120V
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
A
0
20
40
60
80
Q_G, Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
10
T_J = 150°C
T_J = 25°C
1
0.1
0.0
V_GS = 0V _A
0.3
0.6
0.9
1.2
1.5
V_SD , Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
1000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
100
10µs
10
100µs
1ms
1
10ms
T_C = 25°C
T_J = 150°C
Single Pulse
0.1
100ms
1
10
100
1000
V_DS , Drain-to-Source Voltage (V)
A
10000
Fig 8. Maximum Safe Operating Area
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