IRFB7446PBF Datasheet, PDF (5/9 Pages) International Rectifier – HEXFETPower MOSFET

1000
100
10
TJ = 175°C
TJ = 25°C
1
VGS = 0V
0.1
0.0
0.5
1.0
1.5
2.0
VSD, Source-to-Drain Voltage (V)
Fig 9. Typical Source-Drain Diode
Forward Voltage
50
Id = 5.0mA
49
48
47
46
45
44
43
42
41
40
-60 -20 20 60 100 140 180
TJ , Temperature ( °C )
Fig 11. Drain-to-Source Breakdown Voltage
20.0
15.0
10.0
IRFB7446PbF
10000
1000
OPERATION IN THIS AREA
LIMITED BY RDS(on)
100μsec
100
1msec
DC
Package Limited
10
10msec
1 Tc = 25°C
Tj = 175°C
Single Pulse
0.1
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 10. Maximum Safe Operating Area
0.6
VDS= 0V to 32V
0.5
0.4
0.3
0.2
0.1
0.0
0 5 10 15 20 25 30 35 40 45
VDS, Drain-to-Source Voltage (V)
Fig 12. Typical C_OSS Stored Energy
VGS = 5.5V
VGS = 6.0V
VGS = 7.0V
VGS = 8.0V
VGS = 10V
5.0
0.0
0
100 200 300 400 500
ID, Drain Current (A)
Fig 13. Typical On-Resistance vs. Drain Current
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