IRFB7446PBF Datasheet, PDF (2/9 Pages) International Rectifier – HEXFETPower MOSFET

IRFB7446PbF
Absolute Maximum Ratings
Symbol
Parameter
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_D @ T_C = 25°C
I_DM
P_D @T_C = 25°C
Continuous Drain Current, V_GS @ 10V (Silicon Limited)
Continuous Drain Current, V_GS @ 10V (Silicon Limited)
Continuous Drain Current, V_GS @ 10V (Wire Bond Limited)
d Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
V_GS
T_J
T_STG
Gate-to-Source Voltage
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
E_{AS (Thermally limited)}
E_AS (tested)
I_AR
E_AR
e Single Pulse Avalanche Energy
k Single Pulse Avalanche Energy Tested Value
Ãd Avalanche Current
d Repetitive Avalanche Energy
Thermal Resistance
Symbol
R_θJC
Parameter
j Junction-to-Case
R_θCS
Case-to-Sink, Flat Greased Surface
R_θJA
Junction-to-Ambient
Max.
123™
87
120
492
99
0.66
± 20
-55 to + 175
300
x x 10lbf in (1.1N m)
111
160
See Fig. 14, 15 , 22a, 22b
Typ.
–––
0.50
–––
Max.
1.52
–––
62
Units
A
W
W/°C
V
°C
mJ
A
mJ
Units
°C/W
Static @ T_J = 25°C (unless otherwise specified)
Symbol
Parameter
V_(BR)DSS
ΔV_(BR)DSS/ΔT_J
R_DS(on)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
V_GS(th)
I_DSS
Gate Threshold Voltage
Drain-to-Source Leakage Current
I_GSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
R_G
Internal Gate Resistance
Min.
40
–––
–––
2.2
–––
–––
–––
–––
–––
Typ.
–––
0.033
2.6
3.9
3.0
–––
–––
–––
–––
1.6
Max.
–––
–––
3.3
–––
3.9
1.0
150
100
-100
–––
Units
Conditions
V
V/°C
mΩ
mΩ
V
μA
nA
Ω
V_GS = 0V, I_D = 250μA
d Reference to 25°C, I_D = 5mA
g V_GS = 10V, I_D = 70A
g V_GS = 6.0V, I_D = 35A
V_DS = V_GS, I_D = 100μA
V_DS = 40V, V_GS = 0V
V_DS = 40V, V_GS = 0V, T_J = 125°C
V_GS = 20V
V_GS = -20V
Notes:
 Calculated continuous current based on maximum allowable junction
temperature. Bond wire current limit is 120A. Note that current
limitations arising from heating of the device leads may occur with
some lead mounting arrangements. (Refer to AN-1140)
‚ Repetitive rating; pulse width limited by max. junction temperature.
ƒ Limited by T_Jmax, starting T_J = 25°C, L = 0.046mH,R_G = 50Ω,
I_AS = 70A, V_GS =10V.
„ I_SD ≤ 70A, di/dt ≤ 1174A/μs, V_DD ≤ V_(BR)DSS, T_J ≤ 175°C.
… Pulse width ≤ 400μs; duty cycle ≤ 2%.
† C_oss eff. (TR) is a fixed capacitance that gives the same charging
time as C_oss while V_DS is rising from 0 to 80% V_DSS.
‡ C_oss eff. (ER) is a fixed capacitance that gives the same energy as
C_oss while V_DS is rising from 0 to 80% V_DSS.
ˆ R_θ is measured at T_J approximately 90°C.
‰ This value determined from sample failure population,
starting T_J = 25°C, L=0.046mH, R_G = 50Ω, I_AS = 70A, V_GS =10V.
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