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| IRFB7446PBF Datasheet, PDF (3/9 Pages) International Rectifier – HEXFETPower MOSFET | |||
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IRFB7446PbF
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
gfs
Forward Transconductance
Qg
Qgs
Qgd
Qsync
td (o n)
tr
td (o ff )
tf
Ciss
Coss
Crss
Coss eff. (ER)
Coss eff. (TR)
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Total Gate Charge Sync. (Qg - Qgd)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance (Energy Related)
Effective Output Capacitance (Time Related)
Diode Characteristics
Symbol
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
Ãd (Body Diode)
VSD
dv/dt
Diode Forward Voltage
Ãf Peak Diode Recovery
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IRRM
Reverse Recovery Current
Min.
269
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
Typ.
âââ
62
16
20
42
11
34
33
23
3183
475
331
596
688
Max.
âââ
93
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
Units
Conditions
S VDS = 10V, ID = 70A
ID = 70A
g nC VDS =20V
VGS = 10V
ID = 70A, VDS =0V, VGS = 10V
VDD = 20V
ns ID = 30A
g RG = 2.7Ω
VGS = 10V
VGS = 0V
VDS = 25V
pF Æ = 1.0 MHz, See Fig. 5
i VGS = 0V, VDS = 0V to 32V , See Fig. 11
h VGS = 0V, VDS = 0V to 32V
Min. Typ. Max. Units
Conditions
âââ
 âââ 120
MOSFET symbol
D
A showing the
integral reverse
G
âââ âââ 492
âââ
0.9
1.3
V
g p-n junction diode.
TJ = 25°C, IS = 70A, VGS = 0V
S
âââ
7.6
âââ V/ns TJ = 175°C, IS = 70A, VDS = 40V
âââ
22
âââ
ns TJ = 25°C
VR = 34V,
âââ
âââ
24
15
âââ
âââ
TJ = 125°C
nC TJ = 25°C
g IF = 70A
di/dt = 100A/μs
âââ
15
âââ
TJ = 125°C
âââ
1.0
âââ
A TJ = 25°C
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