IRFB4215 Datasheet, PDF (5/8 Pages) International Rectifier – HEXFET Power MOSFET

IRFB4215
120
LIMITED BY PACKAGE
100
80
60
40
20
0
25
50 75 100 125 150 175
TC , Case Temperature (°C)
Fig 9. Maximum Drain Current Vs.
Case Temperature
V_DS
V_GS
R_G
R_D
D.U.T.
V_GS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
+_-VDD
Fig 10a. Switching Time Test Circuit
V_DS
90%
10%
V_GS
t_d(on) t_r
t_d(off) t_f
Fig 10b. Switching Time Waveforms
1
D = 0.50
0.1
0.01
0.001
0.0001
1E-006
0.20
0.10
0.05
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
τ_{J τJ}
τ_{1 τ1}
R_1R1
Ci= τi/Ri
Ci i/Ri
R_2R2
τ_Cτ
τ_{2 τ2}
Ri (°C/W) τi (sec)
0.266 0.00036
0.294 0.003748
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-005
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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