IRFB4215 Datasheet, PDF (4/8 Pages) International Rectifier – HEXFET Power MOSFET

IRFB4215
7000
6000
5000
4000
V_GS = 0V, f = 1MHz
C_iss = C_gs + C_{gd ,} C_ds SHORTED
C_rss = C_gd
C_oss = C_ds + C_gd
C_iss
3000
2000
1000
0
1
C_oss
C_rss
10
100
V_DS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20
ID = 64A
16
12
V_DS = 48V
V_DS = 30V
V_DS = 12V
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0
40
80
120
160
200
Q_G , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
100
T_J = 175^° C
10
T_J = 25^° C
1
0.1
0.0
V_GS = 0 V
0.5
1.0
1.5
2.0
V_SD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
10000
1000
OPERATION IN THIS AREA
LIMITED BY R _DS(on)
100
100µsec
10
1 _{Tc = 25°C}
Tj = 175°C
Single Pulse
0.1
1
10
1msec
10msec
100
VDS , Drain-toSource Voltage (V)
1000
Fig 8. Maximum Safe Operating Area
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