IRFB4215 Datasheet, PDF (2/8 Pages) International Rectifier – HEXFET Power MOSFET

IRFB4215
Electrical Characteristics @ T_J = 25°C (unless otherwise specified)
V_(BR)DSS
∆V_(BR)DSS/∆T_J
R_DS(on)
V_GS(th)
g_fs
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
I_DSS
Drain-to-Source Leakage Current
I_GSS
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
L_D
Internal Drain Inductance
L_S
Internal Source Inductance
C_iss
Input Capacitance
C_oss
Output Capacitance
C_rss
Reverse Transfer Capacitance
E_AS
Single Pulse Avalanche Energy‚
Min. Typ. Max. Units
Conditions
60 ––– ––– V V_GS = 0V, I_D = 250µA
––– 0.066 ––– V/°C Reference to 25°C, I_D = 1mA
––– ––– 9.0 mΩ V_GS = 10V, I_D = 54A „‡
2.0 ––– 4.0
61 ––– –––
V V_DS = V_GS, I_D = 250µA
S V_DS = 25V, I_D = 54A„‡
––– ––– 25
––– ––– 250
µA ^{VDS = 60V, VGS = 0V}
V_DS = 48V, V_GS = 0V, T_J = 150°C
––– ––– 100 _nA V_GS = 20V
––– ––– -100
V_GS = -20V
––– ––– 170
I_D = 64A
––– ––– 39
––– ––– 59
nC V_DS = 48V
V_GS = 10V, See Fig. 6 and 13‡
––– 22 –––
V_DD = 30V
––– 160 ––– _ns I_D = 64A
––– 77 –––
R_G = 6.2Ω
––– 110 –––
V_GS = 10V, See Fig. 10 „‡
––– 4.5 –––
Between lead,
D
6mm (0.25in.)
nH
from package
G
––– 7.5 –––
and center of die contact
S
––– 4080 –––
V_GS = 0V
––– 840 –––
V_DS = 25V
––– 180 ––– pF ƒ = 1.0MHz, See Fig. 5‡
––– 1080…220† mJ I_AS = 90A, L = 54µH‡
Source-Drain Ratings and Characteristics
Parameter
I_S
Continuous Source Current
(Body Diode)
I_SM
Pulsed Source Current
(Body Diode)
V_SD
Diode Forward Voltage
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
t_on
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
––– ––– 115ˆ
A
showing the
integral reverse
G
––– ––– 360
p-n junction diode.
S
––– ––– 1.2 V T_J = 25°C, I_S = 90A, V_GS = 0V „‡
––– 78 120 ns T_J = 25°C, I_F = 64A
––– 250 380 nC di/dt = 100A/µs „‡
Intrinsic turn-on time is negligible (turn-on is dominated by L_S+L_D)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11)
„ Pulse width ≤ 400µs; duty cycle ≤ 2%.
… This is a typical value at device destruction and represents
‚
Starting T_J = 25°C, L = 60µH
R_G = 25Ω, I_AS = 85A, V_GS=10V (See Figure 12)
operation outside rated limits.
† This is a calculated value limited to T_J = 175°C .
ƒ I_SD ≤ 90A, di/dt ≤ 250A/µs, V_DD ≤ V_(BR)DSS,
T_J ≤ 175°C
‡ This is tested with same test conditions as the existing data sheet
ˆ Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 75A.
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