IRF9410 Datasheet, PDF (5/7 Pages) International Rectifier – Power MOSFET(Vdss=30V, Rds(on)=0.030ohm)

IRF9410
1000
800
600
400
VGS = 0V,
f = 1MHz
C _{is s} = C _gs + C _gd , C_ds SH O RTE D
C_rss = C _gd
Co ss = Cds + C g d
C iss
Coss
200
C rs s
0
A
1
10
100
V _{D S} , Drain-to-Source V oltage (V)
Fig 9. Typical Capacitance Vs.
Drain-to-Source Voltage
20
ID = 2.0A
16
V_DS = 15V
12
8
4
0
0
6
12
18
24
30
Q_G, Total Gate Charge (nC)
Fig 10. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
0.50
10 ^0.20
0.10
0.05
0.02
1
0.01
P_DM
t₁
t₂
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.00001
0.0001
0.001
0.01
Notes:
1. Duty factor D = t ₁/ t ₂
2. Peak T _J = P _DM x Z _thJA + T_A
0.1
1
10
100
t₁ , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient