IRF9410 Datasheet, PDF (2/7 Pages) International Rectifier – Power MOSFET(Vdss=30V, Rds(on)=0.030ohm)

IRF9410
Electrical Characteristics @ T_J = 25°C (unless otherwise specified)
Parameter
V(BR)DSS Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
R_DS(on)
Static Drain-to-Source On-Resistance
VGS(th)
g_fs
I_DSS
I_GSS
Q_g
Q_gs
Qgd
td(on)
tr
t_d(off)
t_f
Ciss
Coss
Crss
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
Conditions
30 ––– ––– V VGS = 0V, ID = 250µA
––– 0.024 ––– V/°C Reference to 25°C, I_D = 1mA
––– 0.024 0.030
V_GS = 10V, I_D = 7.0A „
––– 0.032 0.040 Ω VGS = 5.0V, ID = 4.0A „
––– 0.037 0.050
VGS = 4.5V, ID = 3.5A „
1.0 ––– ––– V VDS = VGS, ID = 250µA
––– 14 –––
––– ––– 2.0
––– ––– 25
S V_DS = 15V, I_D = 7.0A
µA ^{VDS = 24V, VGS = 0V}
VDS = 24V, VGS = 0V, TJ = 55°C
––– ––– 100 _nA VGS = 20V
––– ––– -100
VGS = -20V
––– 18 27
––– 2.4 3.6
––– 4.9 7.4
I_D = 2.0A
nC V_DS = 15V
VGS = 10V, See Fig. 10 „
––– 7.3 15
VDD = 25V
––– 8.3 17
––– 23 46
––– 17 34
ns ^{ID = 1.0A}
R_G = 6.0Ω, V_GS = 10V
R_D = 25Ω „
––– 550 –––
VGS = 0V
––– 260 ––– pF VDS = 25V
––– 100 –––
ƒ = 1.0MHz, See Fig. 9
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) 
V_SD
Diode Forward Voltage
trr
Reverse Recovery Time
Q_rr
Reverse RecoveryCharge
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
––– ––– 2.8
showing the
A _{integral reverse}
G
––– ––– 37
p-n junction diode.
S
––– 0.78 1.0 V T_J = 25°C, I_S = 2.0A, V_GS = 0V ƒ
––– 40 80 ns TJ = 25°C, IF = 2.0A
––– 63 130 nC di/dt = 100A/µs ƒ
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
‚ Starting T_J = 25°C, L = 6.6mH
R_G = 25Ω, I_AS = 4.6A.
… Surface mounted on FR-4 board, t ≤ 10sec.
ƒ I_SD ≤ 4.6A, di/dt ≤ 120A/µs, V_DD ≤ V_(BR)DSS,
T_J ≤ 150°C
„ Pulse width ≤ 300µs; duty cycle ≤ 2%.