IRF9410 Datasheet, PDF (1/7 Pages) International Rectifier – Power MOSFET(Vdss=30V, Rds(on)=0.030ohm)

PD - 9.1562A
l Generation V Technology
l Ultra Low On-Resistance
l N-Channel MOSFET
l Surface Mount
l Very Low Gate Charge and
Switching Losses
l Fully Avalanche Rated
PRELIMINARY
S
1
S
2
S
3
G
4
IRF9410
HEXFET^® Power MOSFET
AA
8
D
7
D
V_DSS = 30V
6
D
5 _{D RDS(on) = 0.030Ω}
T o p V ie w
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
Recommended upgrade: IRF7403 or IRF7413
Lower profile/smaller equivalent: IRF7603
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
S O -8
Absolute Maximum Ratings ( T_A = 25°C Unless Otherwise Noted)
Symbol
Maximum
Drain-Source Voltage
V_DS
30
Gate-Source Voltage
V_GS
± 20
Continuous Drain Current…
T_A = 25°C
T_A = 70°C
I_D
7.0
5.8
Pulsed Drain Current
I_DM
37
Continuous Source Current (Diode Conduction)
I_S
2.8
Maximum Power Dissipation …
T_A = 25°C
T_A = 70°C
P_D
2.5
1.6
Single Pulse Avalanche Energy ‚
E_AS
70
Avalanche Current
I_AR
4.2
Repetitive Avalanche Energy
E_AR
0.25
Peak Diode Recovery dv/dt ƒ
dv/dt
5.0
Junction and Storage Temperature Range
T_J, T_STG
-55 to + 150
Thermal Resistance Ratings
Parameter
Maximum Junction-to-Ambient …
Symbol
R_θJA
Limit
50
Units
V
A
W
mJ
A
mJ
V/ ns
°C
Units
°C/W
9/15/97