IRF8010PBF Datasheet, PDF (5/8 Pages) International Rectifier – HEXFET Power MOSFET

80
LIMITED BY PACKAGE
60
40
20
0
25
50
75
100
125
150
175
T_C, Case Temperature ( ^°C)
Fig 9. Maximum Drain Current Vs.
Case Temperature
10
IRF8010PbF
V_DS
V_GS
R_G
R_D
D.U.T.
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
+_-VDD
Fig 10a. Switching Time Test Circuit
V_DS
90%
10%
V_GS
t_d(on) t_r
t_d(off) t_f
Fig 10b. Switching Time Waveforms
1
D = 0.50
0.20
0.1
0.10
0.05
0.02
0.01
0.01
0.00001
SINGLE PULSE
(THERMAL RESPONSE)
0.0001
0.001
0.01
t₁, Rectangular Pulse Duration (sec)
P _DM
t₁
t₂
Notes:
1. Duty factor D =
t₁/ t ₂
2. Peak T _J = P _DM x Z _thJC + T _C
0.1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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