IRF8010PBF Datasheet, PDF (4/8 Pages) International Rectifier – HEXFET Power MOSFET

IRF8010PbF
100000
10000
1000
100
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
Coss
Crss
10
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
12
ID= 80A
10
8
VDS= 80V
VDS= 50V
VDS= 20V
6
4
2
0
0
20
40
60
80
100
QG Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
100
T_J= 175 ° C
10
T_J= 25 ^° C
1
0.1
0.0
V _GS = 0 V
0.5
1.0
1.5
2.0
V _SD,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
10000
1000
OPERATION IN THIS AREA
LIMITED BY R _DS(on)
100
100µsec
10
1msec
1 _{Tc = 25°C}
Tj = 175°C
Single Pulse
0.1
1
10
10msec
100
VDS, Drain-to-Source Voltage (V)
1000
Fig 8. Maximum Safe Operating Area
www.irf.com