IRF8010PBF Datasheet, PDF (3/8 Pages) International Rectifier – HEXFET Power MOSFET

IRF8010PbF
10000
1000
100
TOP
BOTTOM
VGS
15V
12V
10V
6.0V
5.5V
5.0V
4.5V
4.0V
10
1
0.1
0.1
4.0V
20µs PULSE WIDTH
Tj = 25°C
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
1000
100
TOP
BOTTOM
VGS
15V
12V
10V
6.0V
5.5V
5.0V
4.5V
4.0V
10
4.0V
1
0.1
20µs PULSE WIDTH
Tj = 175°C
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1000
100
TJ = 175°C
10
TJ = 25°C
1
2.0
VDS = 50V
20µs PULSE WIDTH
4.0 6.0 8.0 10.0 12.0 14.0 16.0
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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3.5
ID = 80A
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-60 -40 -20 0
V _GS = 10V
20 40 60 80 100 120 140 160 180
T_J, Junction Temperature
( ^° C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3