IRF7807D1 Datasheet, PDF (5/8 Pages) International Rectifier – MOSFET / SCHOTTKY DIODE

IRF7807D1
0.05
0.024
0.04
0.022
VGS = 4.5V
0.03
0.020
0.02
ID = 7.0A
0.018
VGS = 10V
0.01
2.0
4.0
6.0
8.0
10.0
VGS, Gate -to -Source Voltage (V)
0.016
0
20
40
60
80
I _D , Drain Current (A)
Fig 9. On-Resistance Vs. Gate Voltage
Fig 10. On-Resistance Vs. Drain Current
100
D = 0.50
10
0.20
0.10
0.05
0.02
0.01
1
0.1
0.001
SINGLE PULSE
(THERMAL RESPONSE)
P_DM
t₁
t₂
Notes:
1. Duty factor D = t₁ / t ₂
2. Peak T_J = P _DM x Z_thJA + T_A
0.01
0.1
1
10
100
t₁ , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
(HEXFET^® MOSFET)
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