IRF7807D1 Datasheet, PDF (4/8 Pages) International Rectifier – MOSFET / SCHOTTKY DIODE

IRF7807D1
2000
1600
V_GS = 0V, f = 1MHz
C_iss = C_gs + C_{gd ,} C_ds SHORTED
C_rss = C_gd
C_oss = C_ds + C_gd
1200
C_iss
800
C_oss
400
0
1
C_rss
10
100
V_DS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
6.0
ID= 7.0A
VDS = 16V
4.0
2.0
0.0
0
2
4
6
8
10
12
QG, Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
2.0 _{ID = 7.0A}
VGS = 4.5V
1.5
1.0
100
TJ = 25°C
TJ = 150°C
10
0.5
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature ( °C )
Fig 7. Normalized On-Resistance
Vs. Temperature
4
1
2.5
VDS = 10V
380µs PULSE WIDTH
3.0
3.5
VGS, Gate-to-Source Voltage (V)
Fig 8. Typical Transfer Characteristics
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