IRF7807D1 Datasheet, PDF (1/8 Pages) International Rectifier – MOSFET / SCHOTTKY DIODE

PD- 93761
IRF7807D1
FETKY™ MOSFET / SCHOTTKY DIODE
• Co-Pack N-channel HEXFET^® Power MOSFET
and Schottky Diode
• Ideal for Synchronous Rectifiers in DC-DC
Converters Up to 5A Output
• Low Conduction Losses
• Low Switching Losses
• Low Vf Schottky Rectifier
SO-8
A/S
1
8
K/D
A/S
2
7
K/D
A/S
3
6
K/D
G
4
5
K/D
D
Top View
Description
The FETKY^™ family of Co-Pack HEXFET^®MOSFETs and
Schottky diodes offers the designer an innovative, board
space saving solution for switching regulator and power
management applications. HEXFET power MOSFETs
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. Combining
this technology with International Rectifier’s low forward
drop Schottky rectifiers results in an extremely efficient
device suitable for use in a wide variety of portable
electronics applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics.The SO-
8 package is designed for vapor phase, infrared or wave
soldering techniques.
Absolute Maximum Ratings
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain or Source
25°C
I_D
Current (V_GS ≥ 4.5V)
70°C
Pulsed Drain Current
I_DM
Power Dissipation
25°C
P_D
70°C
Schottky and Body Diode
Average ForwardCurrent„
25°C
70°C
I_F (AV)
Junction & Storage Temperature Range
T_J, T_STG
Thermal Resistance
Parameter
Maximum Junction-to-Ambientƒ
R_θJA
www.irf.com
Device Features (Max Values)
V_DS
R_DS(on)
Q_g
Q_sw
Q_oss
IRF7807D1
30V
25mΩ
14nC
5.2nC
18.4nC
Max.
30
±12
8.3
6.6
66
2.5
1.6
3.5
2.2
–55 to 150
Max.
50
Units
V
A
W
A
°C
Units
°C/W
1
11/8/99