IRF7701GPBF Datasheet, PDF (5/9 Pages) International Rectifier – HEXFET® Power MOSFET Ultra Low On-Resistance

IRF7701GPbF
10.0
8.0
6.0
4.0
2.0
0.0
25
50
75
100
125
150
T_C , Case Temperature ( ^°C)
V_DS
V_GS
R_G
R_D
D.U.T.
V_GS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
-
+ V_DD
Fig 10a. Switching Time Test Circuit
V_GS
10%
t_d(on) t_r
t_d(off) t_f
Fig 9. Maximum Drain Current Vs.
Case Temperature
90%
V_DS
Fig 10b. Switching Time Waveforms
100
D = 0.50
0.20
10
0.10
0.05
0.02
1
0.01
0.1
0.01
0.00001
PDM
SINGLE PULSE
(THERMAL RESPONSE)
t₁
t₂
Notes:
1. Duty factor D = t₁ / t ₂
2. Peak T_J = P _DM x Z _thJA + T_A
0.0001
0.001
0.01
0.1
1
t₁, Rectangular Pulse Duration (sec)
10
100
Fig 10. Typical Effective Transient Thermal Impedance, Junction-to-Ambient
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