IRF7701GPBF Datasheet, PDF (3/9 Pages) International Rectifier – HEXFET® Power MOSFET Ultra Low On-Resistance

100
10
VGS
TOP -7.00V
-4.5V
-3.0V
-2.5V
-1.8V
-1.5V
-1.2V
BOTTOM -1.0V
1
-1.0V
0.1
0.01
0.1
20µs PULSE WIDTH
TJ = 25 °C
1
10
-V_DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
IRF7701GPbF
100
10
VGS
TOP -7.00V
-4.5V
-3.0V
-2.5V
-1.8V
-1.5V
-1.2V
BOTTOM -1.0V
-1.0V
1
0.1
0.1
20µs PULSE WIDTH
TJ= 150 °C
1
10
-V_DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
100
T_J = 25° C
T_J = 150° C
10
1
0.1
1.0
V _DS = -10V
20µs PULSE WIDTH
1.5
2.0
2.5
3.0
-V_GS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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2.0 _{ID = -10A}
1.5
1.0
0.5
V_GS= -4.5V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T_J, Junction Temperature ( ^°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3