IRF7701GPBF Datasheet, PDF (4/9 Pages) International Rectifier – HEXFET® Power MOSFET Ultra Low On-Resistance

IRF7701GPbF
8000
6000
4000
Ciss
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
2000
Coss
Crss
0
1
10
100
-VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
10 _{ID = -10A}
8
V_DS =-9.6V
6
4
2
FOR TEST CIRCUIT
SEE FIGURE 13
0
0
20
40
60
80
100
Q_G , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
T_J = 150°C
10
T_J = 25°C
1
0.1
0.2
V_GS = 0 V
0.4 0.6 0.8 1.0 1.2 1.4
-V_SD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
1000
OPERATION IN THIS AREA LIMITED
BY R_DS(on)
100
100us
1ms
10
10ms
T_A = 25°C
T_J = 150°C
Single Pulse
1
0.1
1
10
100
-V_DS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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