IRF7663PBF Datasheet, PDF (5/7 Pages) International Rectifier – Trench Technology, Ultra Low On-Resistance, P-Channel MOSFET

9.0
7.5
6.0
4.5
3.0
1.5
0.0
25
50
75
100
125
150
T_C , Case Temperature ( °C)
Fig 9. Maximum Drain Current Vs.
Case Temperature
IRF7663PbF
300
ID
TOP
-1.6A
-2.9A
240
BOTTOM -3.6A
180
120
60
0
25
50
75
100
125
150
Starting T_J , Junction Temperature ( ^°C)
Fig 10. Maximum Avalanche Energy
Vs. Drain Current
100
D = 0.50
0.20
10
0.10
0.05
0.02
PDM
1
0.01
t1
0.1
0.00001
SINGLE PULSE
(THERMAL RESPONSE)
t₂
Notes:
1. Duty factor D = t1 / t 2
2. Peak TJ = P DM x Z thJC + TC
0.0001
0.001
0.01
0.1
1
t₁, Rectangular Pulse Duration (sec)
10
100
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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