IRF7663PBF Datasheet, PDF (3/7 Pages) International Rectifier – Trench Technology, Ultra Low On-Resistance, P-Channel MOSFET

100
VGS
TOP -7.00V
-5.00V
-4.50V
-3.50V
-3.00V
-2.70V
-2.50V
BOTTOM -2.25V
10
-2.25V
IRF7663PbF
100
VGS
TOP -7.00V
-5.00V
-4.50V
-3.50V
-3.00V
-2.70V
-2.50V
BOTTOM -2.25V
10
-2.25V
20µs PULSE WIDTH
TJ = 25 °C
1
0.1
1
10
100
-V_DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
20µs PULSE WIDTH
TJ = 150 °C
1
0.1
1
10
100
-V_DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
100
T_J = 25° C
T_J = 150° C
10
2.0
V DS = -15V
20µs PULSE WIDTH
2.5
3.0
3.5
4.0
-V_GS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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2.0 _{ID = -8.2A}
1.5
1.0
0.5
V_GS= -4.5V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T_J, Junction Temperature ( ^°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3