IRF7663PBF Datasheet, PDF (4/7 Pages) International Rectifier – Trench Technology, Ultra Low On-Resistance, P-Channel MOSFET

IRF7663PbF
4000
3000
2000
Ciss
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
1000
Coss
Crss
0
1
10
100
-VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
10 _{ID = -6.0A}
8
V_DS = -10V
6
4
2
FOR TEST CIRCUIT
SEE FIGURE 13
0
0
10
20
30
40
50
Q_G, Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
T_J = 25° C
10
T_J = 150° C
V_GS = 0 V
1
0.5
1.0
1.5
2.0
2.5
-V_SD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
1000
OPERATION IN THIS AREA LIMITED
BY R_DS(on)
100
10us
100us
10
1ms
T_C = 25°C
T_J = 150°C
Single Pulse
1
0.1
1
10ms
10
100
-V_DS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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