IRF7580MTRPBF Datasheet, PDF (5/11 Pages) International Rectifier – DirectFET® N-Channel Power MOSFET

1000
100
TJ = 175°C
10
TJ = 25°C
1
VGS = 0V
0.1
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
VSD, Source-to-Drain Voltage (V)
Fig 9. Typical Source-Drain Diode Forward Voltage
78
Id = 1.0mA
76
74
72
70
68
66
64
-60 -40 -20 0 20 40 60 80 100120140160180
TJ , Temperature ( °C )
Fig 11. Drain-to-Source Breakdown Voltage
7.0
IRF7580MTRPbF
100µsec
100
1msec
10
OPERATION
IN THIS
AREA
LIMITED BY
1
RDS(on)
0.1 _{Tc = 25°C}
Tj = 175°C
Single Pulse
0.01
0.1
1
10msec
DC
10
VDS, Drain-to-Source Voltage (V)
Fig 10. Maximum Safe Operating Area
1.0
0.8
0.6
0.4
0.2
0.0
-10 0 10 20 30 40 50 60
VDS, Drain-to-Source Voltage (V)
Fig 12. Typical C_oss Stored Energy
6.0
Vgs = 5.5V
Vgs = 6.0V
Vgs = 7.0V
Vgs = 8.0V
5.0
Vgs = 10V
4.0
3.0
5 www.irf.com
2.0
0 20 40 60 80 100 120 140 160 180 200
ID, Drain Current (A)
Fig 13. Typical On-Resistance vs. Drain Current
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February 13, 2014