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| IRF7580MTRPBF Datasheet, PDF (3/11 Pages) International Rectifier – DirectFET® N-Channel Power MOSFET | |||
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IRF7580MTRPbF
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
gfs
Forward Transconductance
Qg
Total Gate Charge
Qgs
Gate-to-Source Charge
Qgd
Gate-to-Drain ("Miller") Charge
Qsync
Total Gate Charge Sync. (Qg - Qgd)
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Coss eff. (ER) Effective Output Capacitance (Energy Related)
Coss eff. (TR) Effective Output Capacitance (Time Related)
Diode Characteristics
Symbol
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) ï
VSD
Diode Forward Voltage
dv/dt
Peak Diode Recovery ï
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IRRM
Reverse Recovery Current
Min.
190
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
Min.
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
âââ
Typ.
âââ
120
32
36
84
20
38
53
21
6510
610
360
620
770
Typ.
âââ
âââ
âââ
4.1
41
44
55
71
2.5
Max. Units
Conditions
âââ S VDS = 10V, ID = 70A
180
ID = 70A
âââ
âââ
nC
VDS =30V
VGS = 10V ï
âââ
ID = 70A, VDS =0V, VGS = 10V
âââ
VDD = 30V
âââ
âââ
ns
ID = 30A
RG = 2.7ï
âââ
VGS = 10V ï
âââ
VGS = 0V
âââ
VDS = 25V
âââ pF Æ = 1.0MHz
âââ
VGS = 0V, VDS = 0V to 48V ï
âââ
VGS = 0V, VDS = 0V to 48V ï
Max. Units
Conditions
105 A MOSFET symbol
D
showing the
460
integral reverse
G
p-n junction diode.
S
1.2 V TJ= 25°C,IS = 70A, VGS = 0Vï
âââ V/ns TJ =175°C,IS =70A, VDS = 60V
âââ ns TJ = 25° C VR = 51V,
âââ
TJ = 125°C IF = 70A
âââ nC TJ = 25°C di/dt = 100A/µs ï
âââ
TJ = 125°C
âââ A TJ = 25°C
Notes:
ïï Repetitive rating; pulse width limited by max. junction
temperature.
ï Limited by TJmax, starting TJ = 25°C, L = 42µH
RG = 50ï, IAS = 70A, VGS =10V.
ï ISD ⤠70A, di/dt ⤠980A/µs, VDD ⤠V(BR)DSS, TJ ⤠175°C.
ïï Pulse width ⤠400µs; duty cycle ⤠2%.
ï
ï Coss eff. (TR) is a fixed capacitance that gives the
same charging time as Coss while VDS is rising from 0
to 80% VDSS.
ïï Coss eff. (ER) is a fixed capacitance that gives the
same energy as Coss while VDS is rising from 0 to
80% VDSS.
ïï When mounted on 1" square PCB (FR-4 or G-10
Material). For recommended footprint and soldering
techniques refer to application note #AN-994.
ï Rï± is measured at TJ approximately 90°C.
ï This value determined from sample failure population,
starting TJ = 25°C, L= 42µH, RG = 50ï, IAS = 70A,
VGS =10V.
3 www.irf.com © 2014 International Rectifier
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February 13, 2014
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