IRF7580MTRPBF Datasheet, PDF (4/11 Pages) International Rectifier – DirectFET® N-Channel Power MOSFET

1000
100
10
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
1
4.5V
0.1
0.1
60µs PULSE WIDTH
Tj = 25°C
1
10
100
VDS, Drain-to-Source Voltage (V)
1000
Fig 3. Typical Output Characteristics
1000
TJ = 175°C
100
1000
100
10
IRF7580MTRPbF
4.5V
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
1
0.1
60µs PULSE WIDTH
Tj = 175°C
1
10
100
VDS, Drain-to-Source Voltage (V)
1000
Fig 4. Typical Output Characteristics
2.8
ID = 70A
2.4 ^{VGS = 10V}
2.0
TJ = 25°C
1.6
10
1.2
VDS = 25V
60µs PULSE WIDTH
1.0
3
4
5
6
7
8
VGS, Gate-to-Source Voltage (V)
Fig 5. Typical Transfer Characteristics
100000
10000
VGS = 0V, f = 1 MHZ
Ciss = C _gs + Cgd, C _ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
1000
Coss
Crss
0.8
0.4
-60 -40 -20 0 20 40 60 80 100120140160180
TJ , Junction Temperature (°C)
Fig 6. Normalized On-Resistance vs. Temperature
14.0
ID= 70A
12.0
VDS= 48V
10.0
VDS= 30V
VDS= 12V
8.0
6.0
4.0
2.0
100
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 7. Typical Capacitance vs. Drain-to-Source Voltage
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0.0
0
20 40 60 80 100 120 140 160
QG, Total Gate Charge (nC)
Fig 8. Typical Gate Charge vs. Gate-to-Source Voltage
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February 13, 2014