IRF7534D1 Datasheet, PDF (5/8 Pages) International Rectifier – FETKY MOSFET & Schottky Diode(Vdss=-20V, Rds(on)=0.055ohm, Schottky Vf=0.39V)

Power MOSFET Characteristics
IRF7534D1
0.12
0.10
0.10
VGS = -2.5V
0.08
0.08
0.06
0.06
VGS = -4.5V
ID = -4.3A
0.04
0
5
10
15
20
-ID , Drain Current (A)
Fig 9. Typical On-Resistance Vs. Drain
Current
0.04
2.0
3.0
4.0
5.0
6.0
-VGS, Gate -to -Source Voltage (V)
Fig 10. Typical On-Resistance Vs. Gate
Voltage
1000
100
D = 0.50
0.20
10
0.10
0.05
0.02
0.01
1
SINGLE PULSE
(THERMAL RESPONSE)
P_DM
t₁
t₂
0.1
0.0001
0.001
Notes:
1. Duty factor D = t₁ / t ₂
2. Peak T_J = P _DM x Z_thJA + T_A
0.01
0.1
1
10
100
t₁ , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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