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| IRF7534D1 Datasheet, PDF (2/8 Pages) International Rectifier – FETKY MOSFET & Schottky Diode(Vdss=-20V, Rds(on)=0.055ohm, Schottky Vf=0.39V) | |||
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IRF7534D1
MOSFET Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
RDS(on)
Drain-to-Source Breakdown Voltage
Static Drain-to-Source On-Resistance
-20 âââ âââ V
âââ âââ 0.055
âââ âââ 0.105 â¦
VGS = 0V, ID = -250µA
VGS = -4.5V, ID = -4.3A Â
VGS = -2.5V, ID = -3.4A Â
VGS(th)
gfs
IDSS
IGSS
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
-0.6 âââ -1.2 V
2.5 âââ âââ S
âââ âââ -1.0
âââ âââ -25 µA
âââ âââ -100
âââ âââ 100 nA
VDS = VGS, ID = -250µA
VDS = -10V, ID = -0.8A
VDS = -16V, VGS = 0V
VDS = -16V, VGS = 0V, TJ = 125°C
VGS = -12V
VGS = 12V
Qg
Total Gate Charge
âââ 10 15
ID = -3A
Qgs
Gate-to-Source Charge
âââ 2.1 3.1 nC VDS = -10V
Qgd
Gate-to-Drain ("Miller") Charge
âââ 2.5 3.7
VGS = -5V
td(on)
tr
td(off)
tf
Ciss
Coss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
âââ 10 âââ
VDD = -10V
âââ 46 âââ
âââ 60 âââ
ns
ID = -2A
RG = 6.0â¦
âââ 64 âââ
RD = 5â¦, Â
âââ 1066 âââ
VGS = 0V
âââ 402 âââ pF VDS = -10V
Crss
Reverse Transfer Capacitance
âââ 125 âââ
Æ = 1.0MHz
MOSFET Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current(Body Diode) âââ âââ -1.3
ISM
Pulsed Source Current (Body Diode) âââ âââ -34 A
VSD
Body Diode Forward Voltage
âââ âââ -1.2 V TJ = 25°C, IS = -1.6A, VGS = 0V
trr
Reverse Recovery Time (Body Diode) âââ 54 82 ns TJ = 25°C, IF = -2.5A
Qrr
Reverse Recovery Charge
âââ 41 61 nC di/dt = 100A/µs Â
Schottky Diode Maximum Ratings
Parameter
Max. Units
IF(av)
Max. Average Forward Current
1.9 A
1.4
ISM
Max. peak one cycle Non-repetitive
120
Surge current
11 A
Schottky Diode Electrical Specifications
Conditions
50% Duty Cycle. Rectangular Wave, TA = 25°C
See Fig.13
TA = 70°C
5µs sine or 3µs Rect. pulse Following any rated
10ms sine or 6ms Rect. pulse load condition &
with VRRM applied
Parameter
VFM
Max. Forward voltage drop
IRM
Max. Reverse Leakage current
Ct
dv/dt
Max. Junction Capacitance
Max. Voltage Rate of Charge
( HEXFET is the reg. TM for International Rectifier Power MOSFET's )
2
Max. Units
0.50
0.62
0.39 V
0.57
0.02 mA
8
92 pF
3600 V/ µs
Conditions
IF = 1.0A, TJ = 25°C
IF = 2.0A, TJ = 25°C
IF = 1.0A, TJ = 125°C
IF = 2.0A, TJ = 125°C .
VR = 20V TJ = 25°C
TJ = 125°C
VR = 5Vdc ( 100kHz to 1 MHz) 25°C
Rated VR
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