IRF7526D1PBF_15 Datasheet, PDF (5/10 Pages) International Rectifier – Generation 5 Technology

IRF7526D1PbF
Power Mosfet Characteristics
1000
100
D = 0.50
0.20
10
0.10
0.05
PDM
0.02
0.01
t1
1
SINGLE PULSE
(THERMAL RESPONSE)
t₂
Notes:
0.1
0.00001
0.0001
0.001
0.01
1. Duty factor D = t1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.1
1
10
100
t₁ , Rectangular Pulse Duration (sec)
Fig 9. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
1.5
1.0
VGS = -4.5V
0.5
VGS = -10V
0.0
A
0
1
2
3
4
-I_D , Drain Current (A)
Fig 10. Typical On-Resistance Vs. Drain
Current
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0.60
0.50
0.40
I = -2.0A
0.30
0.20
0.10
3
A
6
9
12
15
-V_GS , Gate-to-Source Voltage (V)
Fig 11. Typical On-Resistance Vs. Gate
Voltage
5