IRF7526D1PBF_15 Datasheet, PDF (4/10 Pages) International Rectifier – Generation 5 Technology

IRF7526D1PbF
Power Mosfet Characteristics
400
V_GS = 0V,
f = 1MHz
C_iss = C_gs + C_gd , C_ds SHORTED
C_rss = C_gd
C_oss = C_ds + C_gd
300
C_iss
Coss
200
Crss
100
20
I _D = -1.2A
16
12
V_DS = -24V
V_DS = -15V
8
4
0
A
1
10
100
-V_DS , Drain-to-Source Voltage (V)
FOR TEST CIRCUIT
SEE FIGURE 9
0
A
0
2
4
6
8
10
12
Q_G , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
10
100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
T_J = 150°C
1
T_J = 25°C
0.1
0.4
V_GS = 0V _A
0.6
0.8
1.0
1.2
1.4
-V_SD , Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
10
100µs
1
1ms
T_A = 25°C
T_J = 150°C
Single Pulse
0.1
10ms
1
10
-V_DS , Drain-to-Source Voltage (V)
A
100
Fig 8. Maximum Safe Operating Area
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