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| IRF7526D1PBF_15 Datasheet, PDF (2/10 Pages) International Rectifier – Generation 5 Technology | |||
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IRF7526D1PbF
MOSFET Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage
-30 âââ âââ V VGS = 0V, ID = -250µA
RDS(on)
Static Drain-to-Source On-Resistance
âââ 0.17 0.20 ⦠VGS = -10V, ID = -1.2A Â
âââ 0.30 0.40
VGS = -4.5V, ID = -0.60A Â
VGS(th)
Gate Threshold Voltage
-1.0 âââ âââ V VDS = VGS, ID = -250µA
gfs
Forward Transconductance
0.94 âââ âââ S VDS = -10V, ID = -0.60A
IDSS
Drain-to-Source Leakage Current
âââ âââ -1.0 µA VDS = -24V, VGS = 0V
âââ âââ -25
VDS = -24V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
âââ âââ -100
nA
VGS = -20V
Gate-to-Source Reverse Leakage
âââ âââ 100
VGS = 20V
Qg
Total Gate Charge
Qgs
Gate-to-Source Charge
âââ 7.5 11
âââ 1.3 1.9
ID = -1.2A
nC VDS = -24V
Qgd
Gate-to-Drain ("Miller") Charge
âââ 2.5 3.7
VGS = -10V, See Fig. 6 Â
td(on)
Turn-On Delay Time
âââ 9.7 âââ
VDD = -15V
tr
td(off)
tf
Rise Time
Turn-Off Delay Time
Fall Time
âââ 12 âââ ns ID = -1.2A
âââ 19 âââ
RG = 6.2â¦
âââ 9.3 âââ
RD = 12â¦, Â
Ciss
Input Capacitance
âââ 180 âââ
VGS = 0V
Coss
Output Capacitance
âââ 87 âââ pF VDS = -25V
Crss
Reverse Transfer Capacitance
âââ 42 âââ
Æ = 1.0MHz, See Fig. 5
MOSFET Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS
ISM
Continuous Source Current(Body Diode) âââ âââ -1.25
Pulsed Source Current (Body Diode) âââ âââ -9.6 A
VSD
Body Diode Forward Voltage
âââ âââ -1.2 V TJ = 25°C, IS = -1.2A, VGS = 0V
trr
Reverse Recovery Time (Body Diode) âââ 30 45 ns TJ = 25°C, IF = -1.2A
Qrr
Reverse Recovery Charge
âââ 37 55 nC di/dt = 100A/µs Â
Schottky Diode Maximum Ratings
Parameter
Max. Units
IF(av)
Max. Average Forward Current
1.9
1.3 A
ISM
Max. peak one cycle Non-repetitive
120
Surge current
11 A
Schottky Diode Electrical Specifications
Conditions
50% Duty Cycle. Rectangular Wave, TA = 25°C
See Fig. 14
TA = 70°C
5µs sine or 3µs Rect. pulse Following any rated
10ms sine or 6ms Rect. pulse load condition &
with VRRM applied
Parameter
VFM
Max. Forward voltage drop
IRM
Max. Reverse Leakage current
Ct
dv/dt
Max. Junction Capacitance
Max. Voltage Rate of Charge
( HEXFET is the reg. TM for International Rectifier Power MOSFET's )
2
Max. Units
0.50
0.62
0.39 V
0.57
0.06 mA
16
92 pF
3600 V/µs
Conditions
IF = 1.0A, TJ = 25°C
IF = 2.0A, TJ = 25°C
IF = 1.0A, TJ = 125°C
IF = 2.0A, TJ = 125°C .
VR = 30V TJ = 25°C
TJ = 125°C
VR = 5Vdc ( 100kHz to 1 MHz) 25°C
Rated VR
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