IRF7501 Datasheet, PDF (5/7 Pages) International Rectifier – Power MOSFET(Vdss=20V, Rds(on)=0.135ohm)

IRF7501
500
V _GS = 0V,
f = 1MHz
C _iss = C_gs + C _gd , C_ds S H O R TE D
C _rss = C _gd
400
C _oss = C_ds + C _gd
C _{is s}
300
C _oss
200
C rss
100
0
A
1
10
100
V _DS , Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Vs.
Drain-to-Source Voltage
10
I _D = 1.7A
V_DS = 16V
8
6
4
2
FOR TEST CIRCUIT
SEE FIGURE 9
0
A
0
2
4
6
8
10
Q _G , Total Gate Charge (nC)
Fig 9. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
100
D = 0.50
0.20
10
0.10
0.05
0.02
P_DM
0.01
t₁
1
SINGLE PULSE
(THERMAL RESPONSE)
t₂
Notes:
0.1
0.00001
0.0001
0.001
0.01
1. Duty factor D = t₁ / t ₂
2. Peak T_J = P _DM x Z_thJA + T_A
0.1
1
10
100
t₁ , Rectangular Pulse Duration (sec)
Fig 10. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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