IRF7501 Datasheet, PDF (3/7 Pages) International Rectifier – Power MOSFET(Vdss=20V, Rds(on)=0.135ohm)

IRF7501
100
VGS
TOP
7.5V
5.0V
4.0V
3.5V
3.0V
2.5V
10
2.0V
BOTTOM 1.5V
1
0.1
0.01
0.1
1.5V
20µs PULSE W IDTH
T_J = 25°C
A
1
10
VD _S , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
100
VGS
TOP
7.5V
5.0V
4.0V
3.5V
3.0V
2.5V
10
2.0V
BOTTOM 1.5V
1
1.5V
0.1
0.01
0.1
20µs PULSE W IDTH
T_J = 150°C
A
1
10
VDS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
100
100
10
TJ = 150°C
TJ = 25°C
1
10
T_J = 150°C
1
T_J = 25°C
0.1
1.5
V_DS = 10V
20µs PULSE W IDTH
A
2.0
2.5
3.0
3.5
4.0
V_GS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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0.1
0.4
VGS = 0V _A
0.6 0.8 1.0 1.2 1.4 1.6 1.8
V_SD , Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
3